A twice interleaved metal patterns is proposed for
decreasing transmission line loss and maintaining operating
bandwidth when using 90-nm complementary metal–oxide–semiconductor
technology. Three transmission lines are implemented
in this experiment. The measurement results show that the location
of interleaved metal patterns in metal-1 and metal-2 films
decreases the attenuation constant and increases the operating
bandwidth compared to the conventional transmission line. To
deeply understand the phenomenon, the effective height is calculated
to analyze the experiment result. The comparison results
show the proposed and conventional transmission lines obtain
attenuation constants of 0.26 dB/mm and 0.71 dB/mm at 40 GHz.
The proposed transmission line can potentially make huge improvements
in millimeter-wave operation
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