A mesh patterned n-type single-crystalline silicon nanomembrane (SiNM) created from a silicon-on-insulator (SOI) wafer is complementally combined with a p-type pentacene layer to form a heterogeneous p-n junction on a fl exible plastic substrate. Excellent rectifying characteristics are obtained from the heterogeneous p-n diode. The diode also exhibits photosensitivity at visible wavelengths with a photo-to-dark current ratio exceeding four orders, a responsivity of 0.7 A/W, and an external quantum effi ciency of 21.9% at 633 nm. Over 60% average transmittance in the visible spectrum is measured from the heterogeneous multilayer junction on a plastic substrate. Outstanding mechanical bending characteristics are observed with up to 1.08% of strain applied to the diode. These results suggest that organic-inorganic heterogeneous integration may be a viable strategy to build fl exible organicinorganic heterojunction devices and thus enable a number of novel multifunctional applications.all at a power intensity of 5 mW. The laser beam spot diameter is 800 μ m and the laser shining area is 0.005 cm 2 . The non-empty (effective) area receiving laser light is 0.00135 cm 2 .

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A flexible silicon barrier diode was fabricated by the transfer printing method. Micro-line patterned p-type single crystalline silicon membranes were created from a silicon on insulator wafer. The dark current of our device was very low, about 1 pA for reverse bias voltages up to 5 V, and showed rectifying behavior with an ideality factor of 1.05. The photo-response and the responsivity was 32 and 0.3 A/W, respectively, for light intensity of 1.2 mW/cm2. Also, the current of the photodetector changed under compressive stress or tensile stress. Our device is functional as the piezotronic sensor as well as the photodetector.

This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm2 V-1 s-1 and an on/off current ratio of over 106 was exhibited by a-In2O3 TFTs annealed at 250 °C.

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