We have developed the Model S -6000 for critical dimension measurement of circuit patterns on VLSI wafers utilizing a filed emission electron source. This instrument has been designed to handle up to a 6" wafer. Measurements are made under low voltage operation, at a high resolving power and at a flicker -free TV -scan rate. Minimum dose feature protects the wafer under measurement from electron beam damage. The S -6000 is a state -of-the -art CD measurement SEM for quality control of in-process wafers.
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