We have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH 4 , GeH 4 , and F 2 . Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on siliconon-glass substrates by a 20 -50 ºC increase of the heating temperature. Over 10 m thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 m-thick Si 0.5 Ge 0.5 film is as low as 5 x 10 6 cm -2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm 2 /Vs, confirming the good crystallinity of the epitaxial films.
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