Infrared wavelength selective thermal emission based on Tamm plasmon polaritons (TPPs) is experimentally demonstrated. Unlike conventional TPP structures having a thin metal layer on a DBR, the proposed structure has a thick metal under a DBR which is more robust for thermal radiation. The number of DBR pairs is a critical factor to maximize the narrowband emission: It has to satisfy the impedance matching condition, which varies with the choice of metal film. The proposed structure can achieve twice higher Q-factor for the measured emissivity compared to typical plasmonic thermal emitters. The structure is one dimensional, only consists of multilayers, and free from nano-patterning, offering a practical design in applications such as gas sensing, narrowband IR sources and in thermophotovoltaics. TOC

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We demonstrate a hybrid plasmonic−pyroelectric device operating as an uncooled midwavelength infrared detector with narrowband spectral selectivity. The device consists of a plasmonic perfect absorber with a built-in pyroelectric ZnO layer: It consists of a ZnO layer sandwiched by a Au microhole array as a top electrode and a Pt bottom electrode as a template for the uniaxially grown ZnO film. The geometrical design of the plasmonic Au (hole array)/ZnO/Pt system is determined by the numerical electromagnetic simulation and then fabricated by colloidal-mask lithography combined with reactive-ion etching. The fabricated detectors exhibit excellent spectral selectivity at the predesigned plasmonic resonances, which are tunable by changing the Au hole diameters. The results obtained here open up a route for realizing a new type of uncooled spectroscopic infrared detectors with a compact design and simple fabrication process.

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Selective thermal emissions from the excitation of Tamm plasmon polaritons (TPPs) are demonstrated. A TPP structure is composed of a distributed Bragg reflector (DBR) and a thin metal film on top. The tunability of the thermal emission was experimentally achieved only by changing the DBR's photonic bandgap. Low cost and large area selective thermal emitters can be realized by TPP-based structures.

We have performed in the present work time-resolved experiments on poly͑3-dodecyl-thiophene͒ ͑P3DDT͒ and poly͑2,5-dioctyloxy-p-phenylene vinylene͒ ͑OO-PPV͒ films by directly probing the formation of charge carriers responsible for the cw photoconductivity within the time domain of-10 ps to 1 ns. Laser light pulses of 400 nm wavelength, 150 fs width, induced photoconductivity in a sample with a frequency 1 kHz. Red 800 nm light pulses delayed in respect to blue ones were revealed to affect the photoconductivity. The effect of the second pulses increased with the delay time. Red light induced changes of the photoconductivity were positive in OO-PPV, and negative in P3DDT. These results are rationalized as an evidence of delayed not immediate formation of free charge carriers. The carriers seem to be formed within 10 ps after the pumping pulse. A mechanism of formation of free polarons from polaron pair is suggested, which has permitted to explain main feature of the results including different signs of the effect of the red light in different polymers.