Lattice defects induced by laser irradiation and their thermal stability during subsequent oxidation were studied by transmission electron microscopy, x‐ray topography, and preferential etching. High power laser pulses above 20 J/cm2 produced dislocation lines and dislocation clusters. Laser pulses of about 15 J/cm2 also generated dislocation clusters and pseudo‐swirl defects in the irradiated region. All of these defects were thermally stable. However, thermally stable defects were not observed when laser pulses of less than 15 J/cm2 were used, although unstable dislocations were generated. The suppression of defect formation by laser damage gettering was examined using Sirtl etching. It was found that thermally stable dislocations and pseudo‐swirl defects acted as sinks for point defects and prevented the formation of precipitates during a subsequent oxidation. Laser damage gettering was used to improve generation lifetime in metal‐oxide‐semiconductor (MOS) capacitors with the result that generation lifetime in the gettered area was improved by two orders of magnitude over that in the ungettered area.
The gettering effect of phosphorus diffusion to the back surface of a silicon wafer on oxidation-induced stacking faults has been studied by evaluating the generation lifetime from the transient response of metal oxide semiconductor (MOS) capacitors. The generation lifetime of wafers subjected to postoxidation phosphorus diffusion gettering is not remarkably decreased by the presence of stacking faults. On the other hand, the generation lifetime of waters subjected to preoxidation gettering is decreased by two orders of magnitude because of the presence of stacking faults. The result is explained by impurity precipitation to Frank partial dislocations bounding stacking faults.
Previous work has established that the optical characteristics of Sb2Se3 films are influenced by an amorphous-crystalline transition at 170 °C. This paper comments on the change in optical characteristics in an optical recording material composed of Sb2Se3 and Bi2Te3 layers caused by alloying between the layers above 250 °C.
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