We demonstrate large, and hysteretic, tunneling magnetoresistance (MR) in field-effect transistors (FETs), when their usual nonmagnetic gate is replaced with a nanoscale ferromagnet. Our analysis indicates that the enhanced MR in the tunneling regime results from the ability of the fringing magnetic fields, which emanate from the nanomagnet into the FET channel, to provide an additional modulation of the electrostatic barrier induced by the applied gate voltage. The ability of this device to detect changes in magnetization may eventually allow the implementation of reprogrammable devices for universal logic and memory applications.
The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.
Concepts and steps for the realization of a new domain wall based giant magnetoresistance nanowire device: From the available 24 multiturn counter to a 212 turn counter Magnetoresistance in a hybrid ferromagnetic/semiconductor device
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