Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471–576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250 nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (Voc), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500 nm-thick) base layer.
InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 lm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 10 4 -3 Â 10 7 cm À2 . We demonstrate that the open circuit voltage (V oc ) of InGaP solar cells is not significantly influenced by TDDs less than 2 Â 10 6 cm À2 . Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit V oc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of $0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.
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