Articles you may be interested inAnalysis and reduction of conductor stress in magnetic bubble memory devices J. Vac. Sci. Technol. A 8, 73 (1990); 10.1116/1.576990 Highfrequency propagation and failure of contiguous disk magnetic bubble devices Abstract: Recent advances in the design of dualconductor bubble devices (invited) Garnet epitaxial films with an orthorhombic anisotropy and a 1.7 J.lm bubble diameter have been grown under strong compression on <110) oriented G.G.G. substrates. The bubble mobility in these films is about 60 mls . Oe and the maximum velocity is about SO m/s. Dual conductor circuits with an 8 J.l m period have been processed onto these films with a planar processing technology. It has been shown that a Poly Tetra Fluo~o Ethylene spacer reduces strongly the influence of the mechanical stresses in the overlay on the magnetic properties of the strongly magnetostrictive epi-layer. This spacer is necessary for good propagation characteristics. At 6 MHz propagation margins of 14% have been observed at a linear current density of 2 mAIJ.lm.
A new field-access bubble detector is described and assessed in terms of signal-strength propagation margins and technology benefits. In this design the detection and propagation functions of the detector are separated by means of a sandwich structure. The so-called sandwich detector consists of a thin NiFe layer (detection), an insulation layer of SiO2, and a thick NiFe layer (propagation). The layers are structured with the aid of one mask (no alignment) while two gross masks (alignment accuracy within 25 μm) are used to create the connections to the detection layer. The measured sensitivity of a 35-chevron stretcher sandwich detector, designed for 7-μm bubbles (4π Ms=150 G), is 2 mV/mA.
The packing density in magnetic bubble circuits is increasing very rapidly. When the smallest dimensions in these circuits are 1 μm or less a successor for the optical lithography becomes necessary. For this purpose an electron image projector is a proper candidate. To study the reliability of the technique for making bubble patterns with this projector a single mask 8 kbit shift register has been realized. The NiFe elements are structured via a Ti lift-off procedure and subsequent reactive sputter etching of the NiFe. The lift-off technology is, among other things favorable owing to the slightly negative slope in the PMMA-resist. A high sputter etch rate ratio between NiFe and Ti during the reactive sputter etching process makes a very thin Ti masking layer feasible. It is shown that bubble devices with smallest features of 1 μm can be made. Uniformity over 2 in. slices is good. Proximity effects are of minor importance.
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