Results of Monte Carlo simulations of Si and GaAs p-n electron emitters are presented. A single-electron Monte Carlo transport simulation is used to obtain the total number, including avalanche multiplication, of electrons which reach the surface of the semiconductor, as well as the fraction of these which overcome the work function and are emitted into the vacuum. The distribution function is obtained, as well as ensemble average of quantities such as the ionization coefficient. The efficiency of the device is calculated as a function of both the work function and the top conducting channel thickness. The potential performance of GaAs devices is explored via the Monte Carlo simulation, and calculated results for the Si device are compared to published experimental data.
The Avalanche Cold Cathode ACC is a new cathode for CRT's which provides power reduction, a shallower tube, Front‐of‐Screen performance improvements, and instant‐on in monitors. Basic electron optical and application aspects are addressed.
In an avalanche electron-emitting diode (AEED), the electrons are emitted after being accelerated in the internal electric field of a very shallow p-n junction biased in avalanche breakdown. Silicon cold cathodes based on this principle have been shown to have a very high reduced brightness of the order of 1000 A/(cmZ sr V ) and have emission-to-junction current efficiencies of the order of a few percent. Triggered by the results obtained on these silicon cold cathodes, a new research project on this subject was started at the Delft University of Technology. Its aim is to investigate whether a semiconductor other than silicon would possibly he even better. Work was started on gallium arsenide as a good candidate. The main reason for choosing GaAs is the existing information on technological possibilities and physical properties. In order to obtain a direct comparison between silicon and gallium arsenide, the geometrical design of the silicon AEED is mimicked as well as possible. The process steps involved in making the devices from MBE-grown substrates can also be used for different materials. The devices have been tested in air for their electrical properties, and vacuum tests are in progress. Removal of the surface oxides is planned by sputtering low-energy ( 100-200 eV) inert gas atoms or ions.
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