We have proposed a novel 2-bit/cell metal-oxide-nitride-oxide-semiconductor memory device with a wrapped gate. Programming and erasing operations are performed by source-side hot-electron injection and hot-hole injection, respectively. Programming speeds of less than 1 ms, programming currents of less than 0.2 mA/mm, and erasing speeds of 10 ms were achieved. In this paper, we describe the abilities of this device and the mechanism of the operation by using a device simulator.
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