This book gives a comprehensive description of the physics and applications of resonant tunnelling diodes. The opening chapters of the book set out the basic principles of coherent tunnelling theory. The effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution and intrinsic bistabilities are then described in detail. The applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, are also reviewed. The book closes with a chapter devoted to the more recent field of resonant tunnelling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this stimulating area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.
Abstract-A new resonant-tunneling diode with four potential barriers and three quantum wells is fabricated and applied to multiple-valued logic for the first time. The diode exhibited significant double negative resistance characteristics and operated as a triply stable device with a single supply voltage between 180 and 230 K.
Abstract-Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's are analyzed using two-dimensional numerical simulation based on a drift-diffusion model. A DX center model is introduced assuming Fermi-Dirac statistics for ionized donor density with the aluminum mole fraction dependence of the deep-donor energy level. The calculated results reveal that the decrease in transconductance of AlGaAs/GaAs HEMT's in a high gate-bias region is caused by the existence of DX centers. This is because the Fermi level is pinned at deep donor levels in the n-AIGaAs layer. Furthermore, the superiority of AlGaAs/InGaAs pseudomorphic HEMT's is discussed in terms of the Fermi-level pinning.
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