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Structural and magnetic properties of (Ga,Mn)N layers grown on SiC by reactive molecular beam epitaxy

Articles you may be interested inAbove room-temperature ferromagnetism of Mn delta-doped GaN nanorods Appl. Phys. Lett.Ferromagnetic behavior of GaN doped with Mn (Ga 1Ϫz Mn z N) grown by the ammonothermal and chemical transport methods is discussed in terms of a second phase ͑ferromagnetic one͒ produced during the growth process. The reference manganese nitride samples grown by the same method as ͑Ga,Mn͒N reveal room-temperature ferromagnetic behavior, depending on the growth details. Different Mn x N y phases are suggested to be responsible for ferromagnetic behavior of ͑Ga,Mn͒N.

Raman spectra of Ga1−xMnxN crystals grown by the resublimation method have been investigated. New bands around 300 and 667 cm−1, as well as a broad structure near 600 cm−1, not observed in undoped GaN have been found. The temperature dependence of major Raman bands has been measured. The simple model of GaN lattice dynamics has been presented, and the observed bands have been assigned to disorder-activated phonon modes, in good agreement with the calculated phonon density of states.

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