In this paper the basics of high temperature HBTs are described. Starting from the wafer structure, and ending with obligatory technological requirements. The paper is completed by a comparison between two very promising HJ3T material systems in terms of high frequency and high temperature performance.
The electrolytic deposition of Pd, Ti, and Ge is demonstrated. A process for depositing smooth surfaces of layers from 10 to 100 nm and thicker is described. Applications of this technology for Schottky and ohmic contacts are shown and the advantages to similar evaporated metallization schemes are listed.
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