The usefulness of graphene for electronics has been limited because it does not have an energy bandgap. Although graphene nanoribbons have non-zero bandgaps, lithographic fabrication methods introduce defects that decouple the bandgap from electronic properties, compromising performance. Here we report direct measurements of a large intrinsic energy bandgap of approximately 50 meV in nanoribbons (width, approximately 100 nm) fabricated by high-temperature hydrogen-annealing of unzipped carbon nanotubes. The thermal energy required to promote a charge to the conduction band (the activation energy) is measured to be seven times greater than in lithographically defined nanoribbons, and is close to the width of the voltage range over which differential conductance is zero (the transport gap). This similarity suggests that the activation energy is in fact the intrinsic energy bandgap. High-resolution transmission electron and Raman microscopy, in combination with an absence of hopping conductance and stochastic charging effects, suggest a low defect density.

The so-called zigzag edge of graphenes has localized and strongly spin-polarized electrons. However, magnetoresistance (MR) behavior associated with the edge electrons has not been reported in graphenes. Here, we measure MR of graphene antidot-lattices, honeycomb-like arrays of hexagonal antidots with a large ensemble of hydrogen-terminated and low-defect antidot edges, prepared by a nonlithographic method using nanoporous alumina templates. We find anomalous MR oscillations arising from localized electron spins existing at the antidot edges. These are promising for realization of spintronic devices.

A hemoconcentrator is installed as a part of cardiopulmonary bypass to concentrate the blood by removing excess water and unnecessary electrolytes from the blood diluted with myocardial protection uid. The hemoconcentrator must remove water from diluted blood ef ciently and quickly and remove proin ammatory cytokines and other unwanted molecules, without losing useful proteins such as albumin. Especially, the pore diameter and diameter distribution of the innermost surface greatly affect the pure water permeability and sieving coef cient of the solutes. In this study, the pore structure of the inner surface of the membrane was observed, and pore measurement of hollow ber hemoconcentrator membranes was attempted using a scanning probe microscope (SPM). The samples studied were commercially available hemoconcentrator membranes PUREMA A and B (JMS Co. Ltd., Japan) having asymmetric structures. A SPM was used using the dynamic force microscopy (DFM), cyclic contact mode. The deep and tortuous pore structure on the inner surface of the hemoconcentrator membrane was observed for the rst time using DFM. The pores had an elliptical shape, elongated in the longitudinal direction. When the elliptical area on the inner surface of the hemoconcentrator membrane was larger, pure water permeability was higher, showing a correlation between the elliptical area and membrane functions. The mean major pore diameters and minor pore diameters as well as the equivalent pore diameter calculated from the tortuous capillary pore model were consistent. Using DFM, the three-dimensional tortuous capillary pores at the inner surface of a hollow ber hemoconcentrator membrane could be studied, and pore diameter and distribution could be measured by image analysis. The results were supported by the tortuous capillary pore model. In the future, we need to clearly show the further superior innovations or creative/ ingenious techniques related to this study. Further the state of new ndings which contribute to development of a new hemoconcentrator and other semipermeable membranes will help to increase the value of this paper. This study is one of the key studies to achieve the targeted function for the transport phenomena through semipermeable membranes including hemoconcentrator.

No abstract

Low-defect graphene nanoribbons (GNRs) derived from the unzipping of carbon nanotubes have exhibited large energy band gaps (transport gaps), despite having widths in the order of ∼100 nm. Here, we report on the unique semiconducting behaviour of very narrow, low-defect GNRs, with widths of less than 20 nm. Narrow GNRs are highly resistive, and additional annealing is required to reduce their resistivity. The GNRs display ambipolar rather than evident semiconducting behaviour (p-and n-types), exhibiting normalized Ion/Ioff as great as ∼10 6 (close to those in a few nm-order-width GNRs) and which are very sensitive to the atmosphere and the termination of the GNRs' edges by foreign atoms (hydrogen for n-type and oxygen for ptype). It is also revealed that the activation energy (Ea ∼35 meV) estimated from the temperature dependence of the minimum conductance is smaller than those in ∼100 nm width GNRs. The observed sharp conductance peak on back-gate voltage (Vbg) dependence and its strong correlation with the Ea value suggest the presence of possible resonant tunnelling through shallow impurity levels with the small Ea introduced by the edge terminations by foreign atoms, which provides the observed unique behaviour, including the high Ion/Ioff. An energy band gap as large as ∼215 meV is also confirmed from the Ioff voltage region on Vbg. These narrow GNRs must open the door to large-scale graphene integration circuits based on CMOS-like behaviour.

No abstract