The development reported herein is that of a surface micromachining technology using two SU-8 layers as a structural material. Three different processes are presented and discussed: the first process makes use of a sol-gel as the sacrificial layer; the second process utilizes the SU-8 itself as the sacrificial layer; the third process utilizes silicon dioxide as the first sacrificial layer and the sol-gel as the second sacrificial layer. These three processes are adapted for one structural layer structure. With a two-layer structure and when release is long, the third process is more adapted.
We adopted mark position recording in order to cancel ghost signals which appear in domain wall displacement detection. We obtained a jitter of 6.8 % at a linear velocity of 1.5 m I sec for a bit length of 0.15 Ilm and a track pitch of 0.85 Ilm using a conventional optical pickup. We confirmed that readout and recording power tolerances are ± 22 % and ± 24 %, respectively, at an areal density of 5.0 Gbit I inch 2 •
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