A wide-band gap oxide alloy, BeZnO, is proposed and studied in this letter. The BeZnO films were deposited on sapphire substrates by our hybrid beam deposition growth method. The value of the energy band gap of BeZnO can be efficiently engineered to vary from the ZnO band gap ͑3.4 eV͒ to that of BeO ͑10.6 eV͒. BeZnO can be used for fabricating films and heterostructures of ZnO-based electronic and photonic devices and for other applications. Changes in the measured energy band gap and lattice constant values with Be content are described for BeZnO alloys.

The crystalline properties of Be substituted ZnO(BeZnO) films deposited on c-Al2O3 substrates are studied. As Be concentration in BeZnO increases, the lattice parameters of BeZnO increases; the c-axis lattice is more sensitively shifted than the a-axis lattice. The energy band gap of the BeZnO films has been efficiently modulated from 3.38eV to 3.81eV by adding Be into ZnO. A linear dependency between band gap and lattice parameters is observed from BeZnO films. BeZnO alloys can be used for new ZnO-based devices based on double heterostructures, quantum wells, or superlattices made with ZnO and BeZnO.