ZnO nanowire arrays with low defect densities were grown electrochemically. The nanowire morphology was significantly changed when ammonium chloride was added to the source material, and an applied potential up to −1.2 V resulted in a homogeneous distribution of the nanowires, while at −1.4 V, inhomogeneous growth was observed. Photoluminescence spectra were excited by both 248 and 325 nm lasers. A lower intensity of defect emission and a blue shift of the band edge emission peak were observed as compared to undoped ZnO. The improved quality is explained in terms of the reduction of oxygen vacancies due to the presence of chlorine. These findings may have potential in fabricating ZnO nanowires with reduced defects at low cost for optical and optoelectronic applications.

Highly transparent ZnO thin films were deposited at different substrate temperatures by pulsed laser deposition in an oxygen atmosphere. The thin films were characterized by various techniques including X-ray diffraction, scanning electron microscopy, optical absorption, and photoluminescence. We demonstrated that oriented wurtzite ZnO thin films could be deposited at room temperature using a high purity zinc target. Variable temperature photoluminescence revealed new characteristics in the band edge emission. The underlying mechanism for the observed phenomena was also discussed.thin films, pulsed laser deposition, optical property, zinc oxide

Doping of ZnO nanostructures was investigated by using a low temperature electrochemical process. Various dopant materials have been studied, including transition metals, group I, and group VII elements. The structure, composition, and optical properties of the doped ZnO nanostructures were analyzed by scanning electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence, and x-ray diffraction. It was demonstrated that dopant elements were incorporated into the ZnO structures. The effects of dopant incorporation on the structure and properties of ZnO were also investigated. This low temperature approach is compatible with current micro-fabrication techniques and promising for largescale production of doped ZnO nanostructures for optical and electronic applications.zinc oxide, nanowires, doping

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