The origin of device characteristic deviations of a single or a few-electrons memory, which are the most serious obstacles to achieving a practical memory, is studied from the viewpoint of fluctuation of storage dots. Our model, in which dot occupation area is essential for device characteristics, is compared to the measured characteristics of fabricated memory cells with various dot radii and densities. The potential to achieve gigabit class memory is demonstrated. MEID is proposed as the practical benefit of nonvolatile multi-dot memories.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.