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Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride Ti 1x Al x N, ternary nitrides tetragonal SrTiN 2 , BaZrN 2 , and BaHfN 2 , hexagonal FeMoN 2 , and nanocomposite TiN-BaZrN 2 .

We examine the electronic structure of δ-Pu, PuCoGa5, and PuO2 using high resolution as well as angle-resolved photoelectron spectroscopy. The fermiology of the strongly correlated metals δ-Pu and PuCoGa5 is investigated by determining the primary quasiparticle peak position with respect to the Fermi energy as well as the crystal momentum dependence of this peak for PuCoGa5. For the Mott insulator PuO2, the photoemission results are compared against the hybrid functional calculations and the prediction of significant covalency, is found to be reasonable.

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