We present results of a study using metal-organic vapor phase epitaxy (MOVPE) to synthesize thin films of cubic GazSe3 on both nearly lattice matched GaP and mismatched GaAs substrates. We find that trimethylgallium (TMGa) pre-reacts with the hydride HzSe in the gas phase to yield films which are only partially epitaxial and that the combination of TMGa with ditertiarybutylselenide produces films of the best crystal quality under steady state flow conditions. We also show that GaAs is an unsuitable substrate for MOVPE growth of gallium selenide due to exchange reactions at the interface leading to poorly bonded films.
Articles you may be interested inOptical functions, phonon properties, and composition of InGaAsN single layers derived from far-and nearinfrared spectroscopic ellipsometry Epitaxial Ga 2 Se 3 layers were grown on GaP ͑100͒ and GaAs ͑100͒ by metal-organic chemical vapor deposition and the heterovalent exchange reaction, respectively. Measurements of the sample reflectance were carried out in the spectral range from 70 to 50 000 cm Ϫ1 ͑ϳ10 meVϪ6.2 eV͒. The dielectric functions in the far infrared were determined from the reflectance measurements and are dominated by strong phonon features of the substrate and the layers. Substrate related multiphonon absorbances and Fabry-Perot interference dominate the mid infrared range. The spectra in the visible spectral range reveal Fabry-Perot interferences up to 2.6 eV indicating a fundamental band gap energy in the blue spectral range in contrast to the previously reported lower value of 2 eV. Further electronic transition energies were observed at 3.9, 4.7, and 5.0 eV.
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