Thin aluminium oxynitride films are formed by plasma nitridation of aluminium. The process is studied for anodic and cathodic treatment in rf and dc generated plasmas of pure nitrogen. The most effective process regarding large thickness and low oxygen content of the films is the cathodic dc nitridation. At typical conditions (325 °C, 130 Pa gas pressure, and 30 min duration) the film thickness reaches 12.5 nm and the oxygen content is 7%. The films are homogeneous and metal‐free but show a graduated transition to the underlying unreacted aluminium metal. The nitrogen transport mechanism is diffusion controlled but influenced by electron bombardment (anodic nitridation) and ion implantation (cathodic nitridation), respectively.
The SiLVV‐Auger line in silicon nitride exhibits large sensitivity to Ar+ ion bombardment. The nitride line at 84.5 eV decreases and a new line at 90 eV appears which can be attributed to single SiN bonds. This process depends on ion energy, dose, and angle of incidence. After ion beam cutoff the revers takes place but it is due at least in part to an oxidation by the residual gas. The higher ion energy the faster is the relaxation.
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