We studied the degradation mechanism and the suppression method for parasitic channel formation by inorganic spin‐on‐glass (SOG) in complimentary metal oxide semiconductor (CMOS) devices with double‐level metallization using test structures and a high frequency C‐V technique. The positive charge induced near the
normalSi/SiO2
interface in the field isolation region caused the parasitic channel. We propose a new mechanism that atomic hydrogen created by the SOG film diffuses to the
normalSi/SiO2
interfacial region and generates the positive charge. There are two distinct mechanisms for the creation of the atomic hydrogen by the SOG films with different cap oxide. In
normalp‐normalSiO
cap which is nondoped silicon oxide deposited by PECVD, Si—OH bonds in the SOG film are broken during the cap
normalp‐normalSiO
deposition and create the atomic hydrogen. In nondoped silicate glass (NSG) cap which is nondoped silicate glass deposited by atmospheric pressure chemical vapor deposition (APCVD), water desorbed from the SOG film reacts with the aluminum electrode and creates the atomic hydrogen. Furthermore,
normalp‐normalSiO
film with higher dangling bond density exhibited a capability to reduce the density of the SOG‐related positive charge. Especially, the bottom
normalp‐normalSiO
film under the SOG film was more effective for reducing the positive charge density compared with the cap
normalp‐normalSiO
film on the SOG film. The improvement is attributed to trapping of SOG‐related atomic hydrogen by the dangling bond in the
normalp‐normalSiO
film. These experimental results are qualitatively explained well with the trapping model introducing the dangling bond as the trap center in the cap and bottom
normalp‐normalSiO
films.
We investigated the influence of composite oxides on the electrical property of the Si/SiO2 interface using a high frequency capacitance-voltage (C-V) technique. The composite oxides are composed of inorganic spin-on-glass (SOG) and nondoped silicate glass (NSG) film deposited by atmospheric pressure chemical vapor deposition with a high yield of water absorption. The density of SOG-related positive charge is enhanced about 1.8 times higher by laying the NSG film under the SOG film, while no enhancement is observed by laying it on the SOG film. The enhancement is because the underlying NSG film absorbs water generated by the dehydration of Si(OH)~ during the SOG curing process. The water-absorbed NSG film seems to increase the amount of atomic hydrogen which generates the positive charge.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.38.0.53 Downloaded on 2015-06-20 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.38.0.53 Downloaded on 2015-06-20 to IP
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