To prove the utility of the Zostera Marina Bed Creation Method by the Sowing Sheet that prevents seeds from flowing out, we have laid some sowing sheet at Rinku Town Coast in December, 2003. In this area, Zostera Marina grew in old days, but there has become hardly it now.The local examination site was examined and decided by numerical method to judge habitable condition of Zostera Marina. The follow-up survey was executed in May, 2004, and it was observed that Zostera Marina has grown to about 80 of them per a unit area and the length of leaves was about 60cm. And in November, 2004, Zostera Marina still kept association. As a result, the importance of selecting the place that was suitable for growth of Zostera Marina and fixing seeds in the bottom of the sea not to be washed away is shown.
In order to promote coastal fishing and improve the residential environments of fishing regions, it is imperative not only to raise improvement standards for individual fishing ports and villages,but also to establish functional roles and relationships between fishing ports which are interdependent and mutually beneficial.The functional roles of fishing ports must also be developed on a region wide basis. This document proposes planning methods for exploring the direction of fishing port improvements on a regional scale by regarding each prefecture as a regional improvement zone. The roles of individual fishing ports in each zone are also clarified.
Since a GaAs semiconductor has a piezoelectricity and a high mobility at the same time, it has attracted the attention of many research workers as material for surface‐acoustic‐wave (SAW) devices utilizing its nonlinearity. However, in published works, the analyses have regarded a semiconductor substrate as a piezoelectric element, or an epitaxial‐growth film as a semiconductor. Also, some analyses of a piezoelectric semiconductor were limited to a one‐dimensional model, or to obtaining the velocity and attenuation of the surface wave by using the perturbation method.
In this paper, a numerical analysis of the SAW on a general piezoelectric element is carried out. The propagation characteristics of the SAW for the carrier density of a semiconductor, the convolution efficiency for the carrier density, and its dependence on the mobility represent new findings. Also, the results of analyses on a double‐layer are shown. Also, the experimental results of the excitation characteristics of an SAW on a GaAs piezoelectric element, and the output of the convolution relating to the carrier density are shown.
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