Research conducted in the early 60 's showed that the osci 1 lat ion wavelength of a semiconductor laser shifted when exposed to magnetic field. These experiments were conducted at very low temperatures and in very strong magnetic fields. We observed the wavelength shift toward a longer wavelength and the threshold current increase, in certain types of laser diodes in relatively weak magnetic fields at room temperature using recently developed Fabry-Perot type laser diodes. The shift mechanism , however, is not yet ful ly understood . We may assume that the presence of a magnetic field affects the current density in certain types of laser diodes, which in turn, affects the temperature around the active layer. This temperature change would then influence osci 1 lation wavelength and threshold current . This means our measurement provides vital information about the current confinement characteristics of laser diodes.
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