One-dimensional nanostructure materials on a desired substrate were fabricated by a hydrogen ion-exfoliation-based wafer bonding approach integrated with a sacrificial layer. The nanoscale defining thickness is exactly achieved by the employment of polysilicon as a sacrificial layer. The hydrogen implanted device wafer was bonded to a Pyrex 7740 wafer and then the polysiliconoxide-silicon sandwich structure layer was exfoliated and transferred onto the Pyrex wafer by a thermal-microwave hybrid method. The thickness of the transferred single-crystal silicon layer was measured at 100 nm by transmission electron microscopy.Modern thin-film technology evolved into nanoscale is a "have to" technique to fabricate advanced electronic and optoelectronic products such as high-speed integrated circuit ͑IC͒ devices, photoelectron devices, and so on. For high-speed ICs, wireless communication, or laser-optics applications, a nanoscale single-crystal quality thin film is the requirement for high reliability, high yield, long lifetime, accuracy, and reproduction. A single-crystal ultrathin film on a dissimilar substrate can combine the advantage properties of two materials to offer a superior work character; for example, the silicon on insulator ͑SOI͒ provides transistors to have subthreshold swings ͑down to the ideal value of about 60 mV/dec͒, smaller source/drain junction and junction-perimeter capacitances, and low current leakage, which allows faster transistor operation and low power consumption to decrease heat generation and prolong the operation time. 1 Such nanoscale single-crystal thin-film SOI material is now in high demand by leading IC manufactures for the development of nanoscale node technology in device fabrication. Until now, the most widespread method for producing a single-crystal thin-film SOI has been Smart-Cut technology. 2 Because of the light mass of hydrogen ion for the technology, it is difficult to fabricate a nanoscale thick film without an additional thinning process. It is a challenge to still keep the uniformity of the thin-film thickness after the additional thinning process. There are two main methods to thin the thickness of the thin film fabricated by the Smart-Cut process to the nanoscale. One is layer-by-layer thinning of the transferred layer from its top face using oxidation-etch technology 3 or the oxygenation-depth-control polishing stop technique, 4 and another one employs a built-in etch-stop layer to achieve an etch-back thinning-based approach 5 developed by IBM.A so-called Si-Sandwich process was developed by Usenko et al. 6 to acquire a nanothick SOI layer by first implanting heavy ions such as silicon ions into a silicon wafer to form a buried crystal-disorder layer as a hydrogen trap layer. The silicon-asimplanted wafer is hydrogenated by an electrolysis step to create a buried hydrogen-filled layer for obtaining a similar hydrogen-ionsplit effect to peel the crystal layer from the buried hydrogenated layer in silicon wafer.However, to avoid complex steps but precisely control t...
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