This paper presents a fully integrated PVDF-on-silicon pyroelectric sensor array. The pyroelectric sensor has two main features: a subpixel low noise charge amplifier and a self-absorbing layered structure. The integrated low noise charge amplifier is implemented in a standard CMOS process technology. It is located directly under the sensing structure, maximizing the pixel fill factor. The self-absorbing pyroelectric sensor is a three-layer stack, consisting of a conductive polymer as an absorber layer and front electrode, a thin PVDF film as the pyroelectric material, and a rear metal layer acting as a reflector layer and rear electrode. The manufacture of the pyroelectric sensor array requires five maskless post-CMOS processing steps and is compatible with any n-well, double metal, double polysilicon, CMOS process. The array has an average pixel voltage sensitivity of 2200 V/W at 100 Hz, an NEP of 2.4/spl times/10/sup -11/ W//spl radic/Hz at 100 Hz, and a specific detectivity of 4.4/spl times/10/sup 8/ cm /spl radic/Hz/W at 100 Hz.
The absorption of 9–11 μm radiation by thin wafers of lightly doped, n-type Si has been measured at several lattice temperatures from 300 to 800 K. The temperature dependence of the absorption coefficient at λ=10.6 μm is extracted from the data and compared with previous measurements and also with recent theoretical models. A novel processing technique is described in which coupling of the CO2 laser radiation to the Si lattice is significantly enhanced by the simultaneous absorption of radiation from an argon laser.
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