Articles you may be interested inArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures Appl. Phys. Lett. 93, 071106 (2008); 10.1063/1.2969063Effect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wiresThe effects of thermal annealing for In 0.25 Ga 0.75 As 1−y N y / GaAs multiquantum wells ͑MQWs͒ have been investigated through thermally detected optical absorption. The QW transition energies have been calculated by using a ten-band k − p model including the band anticrossing model for the description of the InGaAsN band gap variation. The modification of the In concentration profile due to In-Ga interdiffusion during thermal annealing is taken into account through the Fick law. A good agreement is obtained between calculated and experimental energies of optical transitions. Our results show that the In-Ga interdiffusion phenomenon observed in a nitrogen free sample is moderately enhanced by the introduction of nitrogen. The blueshift of optical transitions induced by the annealing process is the result of both In-Ga interdiffusion and rearrangement of local nitrogen environment.
Both thermally detected optical absorption and photoluminescence as a function of temperature are used to investigate the electronic states of InGaAsN/GaAs quantum wells grown by molecular beam epitaxy. The band structure of InGaAsN is first described within the two-band model, assuming that nitrogen only affects the conduction band through the interaction between the localised nitrogen level and the host matrix conduction band. Taking advantage of the accurate knowledge of strained InGaAs/GaAs layers, a simple model allows the calculation of the energy levels in InGaAsN/GaAs quantum wells. Furthermore, the labelled ten-band k.p model is used to derive the strained conduction band offset. The calculations of transition energies in the wells compare favourably with experimental results. From photoluminescence experiments at different temperatures, the ionisation of impurities together with the transition between localisation–delocalisation of the carriers in the well are evidenced
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.