The ordering temperature of FePt was significantly reduced to 275°C by introducing a Cu underlayer on the HF-cleaned Si(001) substrate. A coercivity Hc as high as 6200Oe can be achieved after postannealing at 275°C, and Hc can be further increased to 7000Oe after 300°C postannealing. During the formation of copper silicide Cu3Si, the expanded volume induces a dynamic in-plane tensile stress on FePt films, which accelerates the formation of the ordered FePt phase at low temperature. Different from the static stress induced by the lattice mismatch between films and underlayers, the dynamic stress is relaxed after the formation of Cu3Si is completed; therefore, the low-temperature ordering of FePt mainly takes place simultaneously with the evolution of dynamic stress during the formation of Cu3Si. The coercivity of FePt depends on the amount of Cu3Si and on the stress developed by Cu3Si.
Continuous reduction in the size of the electronics for space limitations with higher processing speed generates high heat flux density from the electronics chips during its operational mode. However, this increased heat flux density causes a major problem for the electronics and leads to the failure of the components if not removed properly. This paper investigates the various cooling techniques especially the liquid cooling system operated with nanofluids-a special kind of fluid with the dispersion of nanometre sized particles. This paper quantifies the various kinds of nanofluids used for electronics cooling along with its thermal performance by targeting on the thermal characteristics such as heat transfer coefficient, thermal resistance, thermal conductance, interface temperature, etc. This paper also quantifies the operation of nanofluids over the various geometries of micro channel heat exchangers that serve as a heat sink for power dissipation from the electronics.
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