Transport properties of Nd 2−x Ce x CuO 4+δ single crystal films (B c, J ab) are investigated in magnetic fields B up to 9T at T =(0.4-4.2)K. An analysis of normal state (at B > B c2 ) Hall coefficient R H n dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with R H n (x) analysis an anomalous sign reversal of Hall effect in mixed state at B < B c2may be ascribed to a flux-flow regime for two types of carriers with opposite charges.
We present the investigation results of the in-plane ρ(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H c, J ab) for electrondoped Nd 2−x Ce x CuO 4+δ with different degree of disorder near antiferromagneticsuperconducting phase boundary. We have experimentally found that for optimally doped compound both the upper critical field slope and the critical temperature decrease with increasing of the disorder parameter (d-wave pairing) while in the case of the underdoped system the critical temperature remains constant and (dH c2 /dT )| Tc increases with increasing of the disorder (s-wave pairing). These features suggest a possible implementation of the complex mixture state as the (s+id)-pairing.
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