The effect of γ ray radiation on the electrical properties of heat treated Tb 0.01 Sn 0.99 Se (sample 1) and Tb 0.05 Sn 0.95 Se (sample 2) samples is studied. It is found that, as a result of irradiation with γ ray 1.25 MeV photons, the charge carrier concentration decreases in the temperature range T = 77-200 K by 17 and 6.3% for samples 1 and 2, respectively. It is assumed that, in the course of irradiation with γ ray photons, terbium impurity atoms are located between sites of the crystal lattice; in addition, Frenkel defects are formed.
Monocrystals are synthesized and grown according to Bridgman-Stockbarger method, and the influence of rareearth elements (REE) as well as of γ-irradiation on electrophysical properties of ( ) ( ) 1 SnSe LnSe − − x x ( ) Ln Pr, Tb, Er − alloy system is investigated. During transition from SnSe to ( ) ( ) 1 SnSe LnSe − − x x solid solutions, a partial compensation of charge carriers occurs and additional scattering centres appear. At low temperatures T < 350 K after irradiation with γ-quanta, thermoemf in samples of p-type conduction becomes higher and decreases in those of n-type conduction. In addition, under the influence of γ-rays radiation, defects come into being causing a decrease in lattice heat conduction and a rise in electron heat conduction. REE impurities are supposed to be positioned among the points of crystal lattice during irradiation with γ-quanta and, moreover, Frenkel defects are formed.
The interactions in the SnSe–TbSe system are investigated, and the solubility region of TbSe in SnSe is determined from the results of a complex physicochemical analysis. The dependence of the electrical conductivity and the concentration of current carriers of TbxSn1−xSe crystals on the composition and temperature is analyzed.
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