The thermoelectric power S of GeTe‐rich (GeTe)1‐x(Bi2Te3)x solid solutions (0 ≦ x ≦ 0.05) is investigated as a function of composition x and temperature T in the range from 80 to 350 K, where the materials have the crystal and band structure of the rhombohedral α‐phase of GeTe. On the basis of the non‐parabolic two‐band Kane model of IV‐VI compounds information on the Fermi energy F (reduced Fermi energy F* = F/k0T, where k0 is the Boltzmann constant) and the degeneracy of the alloys is deduced. A qualitative interpretation of the temperature and composition dependences of S is made. It is assumed that there are two types of carriers (light and heavy holes) and redistribution among the valence bands with the change of temperature.
Electrical conductivity o, Hall coefficient R H , arid thermoelectric power (Scebeck coefficient) S are measured for (GeTe)l-.(Bi2Te3)z solid solutions with 0 5 z 5 0.05 in the temperature range 80 to 350 K. On the basis of these investigations some information on the carrier scattering mechanisms in the alloys is obtained. The electrical resistivity e = l/o is analyzed as function of temperature T and composition z in the above-mentioned temperature interval and resistivity contributions due to acoustic phonori scattering (eat) and to scattering by defects (germanium vacancies, impurity atoms, etc.) and alloy scattering are distinguishcd. From the rcsults it may bc shown that the acoustic phonon resistivity increases nearly linearly with temperature. At low temperatures the resistivity due to defects edef is almost constant and slowly increases at temperatures T > 250 K.
The thermoelectric power (Seebeck coefficient) S which is one of the parameters determining the figure of merit Z of thermoelectric materials is measured for polycrystalline (PbTe), -x(Bi,Te,), solid solutions as a function of temperature T (in the interval from 80 to 350 K) and composition x (in the range 0 5 x 5 0.02). The experimental results are analyzed on the basis of the two-band nonparabolic Kane model and the transport coefficient theory of A"BV' semiconductors. Some information on the phonon-drag term in this coefficient is specially extracted from the data.KOe@@AUAeHT TePMO-3.A.C. s XBJIReTCX OnHAM A 3 IIapaMeTpOB, OIIpeAeJIRIoI4AX TepMO3JICKTpAYeCKy€O 3@@eKTABHOCTb IIOJIyIIpOBOrHAKOBbIX MaTCpAaJIOB. Ero ACCJIenOBaHAe IIpeACTaBJIXeT 60n~u10G AHTepeC AJIR HayKA A TeXHOJIOTAII. B HaCTORrUe% p a 6 o~e naHa KaYeCTBeHHaR AHTepIIpeTaUAR 3aBACAMOCTH 3TOrO KO3@@AqHeHTa OT COCTaBa X A TeMIIepaTypbI T (B AHTepBaJIe OT 80 A 0 350 K) A IIOJIyYeHa AH@OPMaUHR 06 er0 @OHOHHOG COCTaBJIR€OI4& Sph AJIR IIOJIAKpACTaJIJIAYeCKHX TBepnbIX PaCTBOPOB (PbTe), -x(Bi,Te,), rne 0 2 X 5 0.02. ,&Is 3TOfi q e m liCIIOJIb30BaHbI AByX30HHaX HeIIapa-fjona~ec~an MOAeJIb KeiiHa A TeOpAR TPaHCIIOPTHbIX K03@@HUAeHTOB IIOJIyAIIpOBOAHAKOBbIX COenA-HeHAfi TAIIa A'"BV'.
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