Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected electrically, offering new functionalities in advanced electronics at the nanoscale. However, its scattering mechanism is still disputed. Understanding the mechanism in thin films is especially important, because most spintronics devices are made from stacks of multilayers with nanometer thickness. The stacks are known to possess interfacial magnetic anisotropy, a central property for applications, whose influence on the dynamics remains unknown. Here, we investigate the impact of interfacial anisotropy by adopting CoFeB/MgO as a model system. Through systematic and complementary measurements of ferromagnetic resonance (FMR) on a series of thin films, we identify narrower FMR linewidths at higher temperatures. We explicitly rule out the temperature dependence of intrinsic damping as a possible cause, and it is also not expected from existing extrinsic scattering mechanisms for ferromagnets. We ascribe this observation to motional narrowing, an old concept so far neglected in the analyses of FMR spectra. The effect is confirmed to originate from interfacial anisotropy, impacting the practical technology of spin-based nanodevices up to room temperature.
Energy-efficient spintronic technology holds tremendous potential for the design of next-generation processors to operate at terahertz frequencies. Femtosecond photoexcitation of spintronic materials generates sub-picosecond spin currents and emission of terahertz radiation with broad bandwidth. However, terahertz spintronic emitters lack an active material platform for electric-field control. Here, we demonstrate a nonlinear electric-field control of terahertz spin current-based emitters using a single crystal piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) that endows artificial magnetoelectric coupling onto a spintronic terahertz emitter and provides 270% modulation of the terahertz field at remnant magnetization. The nonlinear electric-field control of the spins occurs due to the strain-induced change in magnetic energy of the ferromagnet thin-film. Results also reveal a robust and repeatable switching of the phase of the terahertz spin current. Electric-field control of terahertz spintronic emitters with multiferroics and strain engineering offers opportunities for the on-chip realization of tunable energy-efficient spintronic-photonic integrated platforms.
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