Thickness-Dependent Perpendicular Magnetic Anisotropy and Gilbert Damping in 
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Lourembam, James; Ghosh, Abhijit; Zeng, Minggang; Wong, Seng Kai; Yap, Qi Jia; Lim, Sze Ter

doi:10.1103/physrevapplied.10.044057

Cited by 33 publications

(34 citation statements)

References 64 publications

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“…( 8 ) to fit the experimental data, we have estimated that , and . Our values are close to the data previously reported in the literature for Hf / CoFeB / MgO 23 and Ta/CoFeB/MgO thin films 69 .…”

Section: Resultssupporting

confidence: 92%

“…The main results of our VNA-FMR and TR-MOKE fits are summarized in Table 1 . The gyromagnetic ratio and g-factor did not show any significant dependence with the CoFeB thickness, and we obtained average values of (2.99 ± 0.03) GHz/kOe and (2.14 ± 0.03), respectively, in agreement with the literature 23 , 35 , 68 , 78 .…”

Section: Resultssupporting

confidence: 91%

“…More recently, this non-linearity was also reported for NM/CoFeB/MgO thin films (where NM was Ta 69 or Hf 23 ) and it was fitted using the equation proposed by Gowtham et al . 69 : where is the effective volumetric contribution that should include the shape anisotropy term and both the bulk magnetocrystalline and bulk magnetoelastic anisotropy energy contributions; is the effective surface term that includes the surface magnetocrystalline and magnetoelastic anisotropy terms as well as the second-order term of the bulk magnetoelastic contribution; and coefficient is related to the second-order term of the surface magnetoelastic contribution.…”

Section: Resultsmentioning

confidence: 56%

“…This behaviour can be achieved when the CoFeB layer is thin enough, and the CoFeB/MgO interfacial anisotropy contribution 9 , 16 , 17 overcomes the volumetric terms of the anisotropy energy 18 . Afterwards, several works have been focused on the optimization of the PMA in CoFeB thin films by using different materials for the capping and/or buffer layers 19 , including Ta 20 , 21 , Hf 22 , 23 , Mo 24 , 25 , Ru 26 , 27 , V 26 , Nb 27 , Pt 28 , 29 , Pd 30 – 32 and Au 33 .…”

Section: Introductionmentioning

confidence: 99%

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Dynamical behaviour of ultrathin [CoFeB (tCoFeB)/Pd] films with perpendicular magnetic anisotropy

Silva

Sá

Bunyaev

et al. 2021

Sci Rep

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CoFeB-based ultrathin films with perpendicular magnetic anisotropy are promising for different emerging technological applications such as nonvolatile memories with low power consumption and high-speed performance. In this work, the dynamical properties of [CoFeB (tCoFeB)/Pd (10 Å)]5 multilayered ultrathin films (1 Å ≤ tCoFeB ≤ 5 Å) are studied by using two complementary methods: time-resolved magneto-optical Kerr effect and broadband ferromagnetic resonance. The perpendicular magnetization is confirmed for multilayers with tCoFeB ≤ 4 Å. The effective perpendicular magnetic anisotropy reaches a clear maximum at tCoFeB = 3 Å. Further increase of CoFeB layer thickness reduces the perpendicular magnetic anisotropy and the magnetization became in-plane oriented for tCoFeB ≥ 5 Å. This behaviour is explained by considering competing contributions from surface and magnetoelastic anisotropies. It was also found that the effective damping parameter αeff decreases with CoFeB layer thickness and for tCoFeB = 4 Å reaches a value of ~ 0.019 that is suitable for microwave applications.

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Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 56%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dynamical behaviour of ultrathin [CoFeB (tCoFeB)/Pd] films with perpendicular magnetic anisotropy

Silva

Sá

Bunyaev

et al. 2021

Sci Rep

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“…42 Interestingly, a larger spin-mixing conductance will also increase the damping in the system as required in our simulations. 43 It should be noted that DMI induced field-free switching is for devices of intermediate size only. For devices with diameter <60 nm, the switching is coherent, DMI is unable to induce enough asymmetry to tilt the magnetization towards mz > 0 or mz < 0 within SOT, and hence, the switching is stochastic.…”

mentioning

confidence: 99%

Field-free spin-orbit torque switching of a perpendicular ferromagnet with Dzyaloshinskii-Moriya interaction

Chen

Lourembam

Goolaup

et al. 2019

Applied Physics Letters

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Thickness‐Dependent Topological Hall Effect in 2D Cr₅Si₃ Nanosheets with Noncollinear Magnetic Phase

Zhang

Tao

et al. 2023

Advanced Materials

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disturbances and produce very little stray fields, thus allowing for high-density memory integration. [1][2][3] Among them, noncollinear antiferromagnet with nontrivial spin structure has led to unconventional electromagnetic response. [4][5][6][7] When electrical current flows through a non collinear spin texture, the adjacent three spins (S i , S j , and S k ) produce nonzero scalar spin chirality S i • (S j × S k ), can induce nonzero Berry curvature in real space, which acts like a fictitious magnetic field for the conduction electrons and gives rise to the topological Hall effect (THE). [8][9][10][11][12][13][14] There are series of compounds formed between transition or rare earth metals (T) and different main group elements (M) with chemical formula T 5 M 3 . Among them, T 5 Si 3 phases crystallize with the hexagonal Mn 5 Si 3 -type structure (space group P6 3 /mcm) have been found to have complex antiferromagnetic ordering that deserve attention. [15][16][17] In Mn 5 Si 3 -type structure, there are two inequivalent Wyckoff positions of atoms T: 4(d) and 6(g) (T1 and T2, respectively), yielding two structural motifs in the unit cell [18,19] (Figure S1, Antiferromagnets with noncollinear spin order are expected to exhibit unconventional electromagnetic response, such as spin Hall effects, chiral abnormal, quantum Hall effect, and topological Hall effect. Here, 2D thickness-controlled and high-quality Cr 5 Si 3 nanosheets that are compatible with the complementary metal-oxide-semiconductor technology are synthesized by chemical vapor deposition method. The angular dependence of electromagnetic transport properties of Cr 5 Si 3 nanosheets is investigated using a physical property measurement system, and an obvious topological Hall effect (THE) appears at a large tilted magnetic field, which results from the noncollinear magnetic structure of the Cr 5 Si 3 nanosheet. The Cr 5 Si 3 nanosheets exhibit distinct thickness-dependent perpendicular magnetic anisotropy (PMA), and the THE only emerges in the specific thickness range with moderate PMA. This work provides opportunities for exploring fundamental spin-related physical mechanisms of noncollinear antiferromagnet in ultrathin limit.

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Thickness-Dependent Perpendicular Magnetic Anisotropy and Gilbert Damping in Hf/Co20Fe60B20/Mg

Cited by 33 publications

References 64 publications

Dynamical behaviour of ultrathin [CoFeB (tCoFeB)/Pd] films with perpendicular magnetic anisotropy

Dynamical behaviour of ultrathin [CoFeB (tCoFeB)/Pd] films with perpendicular magnetic anisotropy

Field-free spin-orbit torque switching of a perpendicular ferromagnet with Dzyaloshinskii-Moriya interaction

Thickness‐Dependent Topological Hall Effect in 2D Cr₅Si₃ Nanosheets with Noncollinear Magnetic Phase

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Thickness-Dependent Perpendicular Magnetic Anisotropy and Gilbert Damping in Hf/Co20Fe60B20/Mg

Cited by 33 publications

References 64 publications

Dynamical behaviour of ultrathin [CoFeB (tCoFeB)/Pd] films with perpendicular magnetic anisotropy

Dynamical behaviour of ultrathin [CoFeB (tCoFeB)/Pd] films with perpendicular magnetic anisotropy

Field-free spin-orbit torque switching of a perpendicular ferromagnet with Dzyaloshinskii-Moriya interaction

Thickness‐Dependent Topological Hall Effect in 2D Cr5Si3 Nanosheets with Noncollinear Magnetic Phase

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Product

Resources

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Thickness‐Dependent Topological Hall Effect in 2D Cr₅Si₃ Nanosheets with Noncollinear Magnetic Phase