We have investigated polarized Raman spectra of (001)/(100)-oriented tetragonal epitaxial Pb(ZrxTi1−x)O3 (PZT) thin films (x=∼0.35) in which the volume fraction of the polar c domain is systematically varied from 4% to 96%. From polarization analyses using high epitaxial quality films, we have successfully isolated the A1 and B1 phonons from the E phonons, thus offering a distinctive evaluation of the c domains. As increasing c-domain volume, the A1(TO) modes linearly increase in their intensity. A remarkable correlation is found between the A1(1TO)-mode intensity and the c-domain volume for PZT films. We suggest that this correlation as well as the A1(1TO)-mode intensity provide a simple and useful probe for characterization of c-domain volume and ferroelectric properties in PZT-based devices.
We present the use of Raman spectroscopy as a rapid and convenient evaluation tool for domain distribution of tetragonal PbZr
x
Ti1-x
O3 (PZT) thin films. From polarized Raman analyses of epitaxial PZT thin films with various c-domain volumes, we found that the intensity of the A
1(TO) modes linearly scales with the c-domain volume. These observations, as well as the quick and nondestructive characteristics of this technique, clearly imply that Raman spectroscopy has enormous potential to quantify the fraction of c-domain volumes in a wide range of PZT devices.
We have investigated polarized Raman spectra of epitaxial Pb(Zr x Ti 1−x )O 3 (PZT) thin films (x = ∼0.35) in which the volume ratio of the polar c-domains is systematically varied from 4 to 96% relative to the non-polar a-domains, and a new method using polarized Raman spectroscopy to characterize a relative volume of c-domain in a PZT film is proposed. This method depends on discovery that an intensity of A 1 (1TO) is proportional to the relative volume of c-domain. Polarized Raman spectroscopy is necessary to separate the peaks from A 1 (1TO) and B 1 modes to any other modes.
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