Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.
We have developed a high performance but low cost advanced transflective multi‐domain vertical aligned liquid crystal display (ATR‐MVA LCD) by using micro bump technology. ATR‐MVA LCD does not need additional process of reflective mode by micro‐bump design. for example, 4.0 inches ATR‐MVA LCD's reflectance achieves 1.25% with 7% reflective aperture ratios.
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