The electromechanical response of a 3 nm thick amorphous LaAlO3 layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion of oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.
In this study we demonstrate the effect of change of the sputtering power and the deposition pressure on the ignition and the combustion properties of Al/CuO reactive thin films. A reduced sputtering power of Al along with the deposition carried out at a higher-pressure result in a high-quality thin film showing a 200% improvement in the burn rate and a 50% drop in the ignition energy. This highlights the direct implication of the change of the process parameters on the responsivity and the reactivity of the reactive film while maintaining the Al and CuO thin-film integrity both crystallographically and chemically. Atomically resolved structural and chemical analyzes enabled us to qualitatively determine how the microstructural differences at the interface (thickness, stress level, delamination at high temperatures and intermixing) facilitate the Al and O migrations and impact the overall nano-thermite reactivity. We found that the deposition of CuO under low pressure produces well-defined and similar Al-CuO and CuO-Al interfaces with the least expected intermixing. Our investigations also showed that the magnitude of residual stress induced during the deposition plays a decisive role in influencing the overall nano-thermite reactivity. Higher is the magnitude of the tensile residual stress induced, stronger is the presence of gaseous oxygen at the interface. By contrast, high compressive interfacial stress aids in preserving the Al atoms for the main reaction while not getting expended in the interface thickening. Overall, this analysis helped in understanding the effect of change of deposition conditions on the reactivity of Al/CuO nanolaminates and several handles that may be pulled to optimize the process better by means of physical engineering of the interfaces.
A study of the structural and electrical properties of amorphous LaAlO3 (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique—leading to a step and terraces surface morphology—and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O2 in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltage and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 °C, oxygen partial pressure settled at 10−6 Torr, and 550 W of power applied to the O2 plasma) and post-depositions treatments were investigated to optimize the dielectric constant (κ) and leakage currents density (JGate at |VGate| = |VFB − 1|). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 Å, and JGate ≈ 10−2A/cm2. This confirms the importance of LaAlO3 as an alternative high-κ for ITRS sub-22 nm technology node.
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