Unusual residual time of image sticking under high-voltage electrostatic discharge (ESD) stress on liquid crystal (LC) cells has been observed. It was found that nanoscaled conductive particles doped in LC cells can significantly reduce the residual time of image sticking and the breakdown voltage of the LC cells. This finding can help to protect the doped cells from the attacks of ESD and thus to improve their displaying performance and reliability. In this study, nanoscaled tin-doped indium oxide (ITO) powders were uniformly mixed with high-resistance LC to form a suspension solution. In order to investigate other effects of ITO particles on the LC at high and low voltages, optical and electrical characteristics were compared for the doped cells and those samples without intentional doping. According to the measurement results, it is interesting to find that, except the breakdown characteristic, no other properties in the doped samples were changed with respect to the displaying functions under normal operational voltage.
A transmission electron microscopy (TEM) observation of dislocations in GaN grown on (0001) sapphire by metal organic chemical vapor deposition (MOCVD) was carried out in this study. The GaN film was rotated 30 around the c-axis in the growth plane against the substrate. The finding of this research, according to TEM analysis, is that about 3% (or less) of the threading dislocations are pure screw (b ¼ h0001i) and 20% are pure edge (b ¼ 1=3h11 2 20i). The remaining threading dislocations, about 77%, are mixed-type dislocations; that is the major dislocation type in the GaN epitaxial layer grown on (0001) sapphire is the mixed type. In addition, to further understand the dislocation configuration on the interface of GaN/ sapphire, a plane-view TEM sample of the GaN/sapphire interface was prepared. The plane-view TEM image of the GaN/ sapphire interface reveals an extremely high density of kink dislocations lying on the interface, with a dislocation density of about 8 Â 10 9 cm À2 , involving high strain and stress. A comparison of the 8 Â 10 9 cm À2 dislocation density with another plane-view TEM image (6 Â 10 8 cm À2 ) near the GaN free surface revealed that approximately 7.5% of the dislocations lying on the substrate coalesce into threading dislocations generated from the interface to the GaN surface.
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