During the past decade to the present time, the topic of printed electronics has gained a lot of attention for their potential use in a number of practical applications, including biosensors, photovoltaic devices, RFIDs, flexible displays, large-area circuits, and so on. To fully realize printed electronic components and devices, effective techniques for the printing of passive structures and electrically and chemically compatible materials in the printed devices need to be developed first. The opportunity of using electrically conducting graphene inks will enable the integration of passive structures into active devices, as for example, printed electrolyte-gated transistors (EGTs). Accordingly, in this study, we present the parametric results obtained on fully printed electrolyte-gated transistors having graphene as the passive electrodes, an inorganic oxide semiconductor as the active channel, and a composite solid polymer electrolyte (CSPE) as the gate insulating material. This configuration offers high chemical and electrical stability while at the same time allowing EGT operation at low potentials, implying the distinct advantage of operation at low input voltages. The printed in-plane EGTs we developed exhibit excellent performance with device mobility up to 16 cm 2 V −1 s −1 , an I ON /I OFF ratio of 10 5 , and a subthreshold slope of 120 mV dec −1 .
In recent times, flexible electronics is expanding into newer applications, enabled with many interconnected devices. To complement the smart back-end systems, technology development for the front-end devices has also received a fresh boost. [1] This includes the development of high-performance flexible electronics for applications such as memristors, radio-frequency identification devices, and displays. [2][3][4] Concerning the semiconductor components in printed electronics, oxide materials offer high intrinsic mobilities and environmental stability. [5] These are quite favorable for flexible electronics [6] and are printable because of the realization of cost effective and high-throughput solutionprocessed methods. [7] Examples include amorphous IGZO or crystalline In 2 O 3 . [8,9] Solution-processed and printed polycrystalline oxide transistors that can possibly be prepared on plastic substrates, are reported with greater device mobilities. [10,11] Subsequently, to date, there are noteworthy attempts to create printed oxide transistors and circuits using transistor-transistor logic (TTL) or transistor-resistor logic (TRL). [12][13][14][15][16][17] However, such works used deposition techniques such as photolithography, sputtering, or thermal evaporation to fabricate the electrodes and passive structures. These additional processes often result in defects on the surface of the substrate and in turn, obtain films of a poorer quality. In addition, it would also limit the mechanical flexibility of the printed devices. Solution-processed methods, in contrast, offer conformity with the surface of flexible substrates, better flexibility, and digital-printing methods facilitate the integration of passive components into electronic circuits. Metallic inks such as silver-or carbon-based graphene oxide [18] and graphene nanoflake inks [19,20] are well tested as printed and flexible conductors and resistors. With regards to transistors, fully printed dielectric oxide transistors [21] and electrolyte-gated transistors (EGTs)
In this Letter, we report an inkjet-printed resistive switching device based on an Ag/ZnO/Au structure. The device exhibits bipolar resistive switching behavior, a low operation voltage of about 0.7 V, a high on/off ratio of 107, a long retention time exceeding 104 s, and good endurance. The conduction mechanism of the device in low and high resistive states was studied and showed good consistency with the theory of Ohmic and space charge limited conduction mechanisms, respectively.
voltages for operation [1][2][3][4][5][6][7] and remarkable progress has been made in the development of semiconducting channel materials [8][9][10][11] and gate insulators. [12][13][14] The EGTs are switched on/off by applying a gate potential, which leads to a migration and local redistribution of ions at the semiconductor/electrolyte interfaces. The formed electric double layer (EDL) generates high charge accumulation in the adjacent semiconducting channel, which, for instance, renders the channel conductive at a certain gate potential. For this reason, it is important for gate insulators to show high ionic conductivities, in order to quickly develop strong EDLs that improve the EGT performance. However, the switching speed of EGTs, which is slower than that for dielectric gating, is still considered as a technical hurdle for practical applications. Therefore, various types of advanced polymer electrolytes have been intensively studied.A different approach has been established in the last few years, where an ion-gel, consisting of an ionic liquid and a poly mer, is used as a gate insulator in EGTs. [14][15][16] This approach makes use of the intrinsic properties of ionic liquids, such as high ionic conductivities, negligible volatility, and Electrolyte-gated transistors (EGTs) represent an interesting alternative to conventional dielectric-gating to reduce the required high supply voltage for printed electronic applications. Here, a type of ink-jet printable ion-gel is introduced and optimized to fabricate a chemically crosslinked ion-gel by selfassembled gelation, without additional crosslinking processes, e.g., UV-curing. For the self-assembled gelation, poly(vinyl alcohol) and poly(ethylene-altmaleic anhydride) are used as the polymer backbone and chemical crosslinker, respectively, and 1-ethyl-3-methylimidazolium trifluoromethanesulfonate ([EMIM][OTf ]) is utilized as an ionic species to ensure ionic conductivity. The as-synthesized ion-gel exhibits an ionic conductivity of ≈5 mS cm −1 and an effective capacitance of 5.4 µF cm −2 at 1 Hz. The ion-gel is successfully employed in EGTs with an indium oxide (In 2 O 3 ) channel, which shows on/offratios of up to 1.3 × 10 6 and a subthreshold swing of 80.62 mV dec −1 .
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