We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrating a Bernal-stacked bilayer graphene formed using successive transfers of monolayer graphene flakes. The Raman spectra of this artificial bilayer graphene possess a wide 2D band, which is best fit by four Lorentzians, consistent with Bernal stacking. Scanning tunneling microscopy reveals no moiré pattern on the artificial bilayer graphene, and tunneling spectroscopy as a function of gate voltage reveals a constant density of states, also in agreement with Bernal stacking. In addition, electron transport probed in dual-gated samples reveals a band gap opening as a function of transverse electric field. To illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal boron-nitride dielectric.

The Skyrmion state in epitaxial B20 FeGe(111) thin films, determined by the topological Hall effect, is greatly extended in the phase diagram to cover all temperatures up to the Curie temperature T(C)≈271 K and over a wide magnetic field range that includes a zero magnetic field. The properties of the Skyrmion phase can be controlled and manipulated by the film thickness, which has a strong effect on the stabilization of Skyrmions.

According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moiré patterns produced by small misalignments between its individual layer honeycomb lattices. We have realized bilayer graphene moiré crystals with accurately controlled twist angles smaller than 1°and studied their properties using scanning probe microscopy and electron transport. We observe conductivity minima at charge neutrality, satellite gaps that appear at anomalous carrier densities for twist angles smaller than 1°, and tunneling densities-of-states that are strongly dependent on carrier density. These features are robust up to large transverse electric fields. In perpendicular magnetic fields, we observe the emergence of a Hofstadter butterfly in the energy spectrum, with fourfold degenerate Landau levels, and broken symmetry quantum Hall states at filling factors ±1, 2, 3. These observations demonstrate that at small twist angles, the electronic properties of bilayer graphene moiré crystals are strongly altered by electron-electron interactions.moiré crystal | graphene | twisted bilayer | moiré band | Hofstadter butterfly M oiré patterns form when nearly identical two-dimensional (2D) crystals are overlaid with a small relative twist angle (1-4). The electronic properties of moiré crystals depend sensitively on the ratio of the interlayer hybridization strength, which is independent of twist angle, to the band energy shifts produced by momentum space rotation (5-12). In bilayer graphene, this ratio is small when twist angles exceed about 2°(10, 13), allowing moiré crystal electronic structure to be easily understood using perturbation theory (5). At smaller twist angles, electronic properties become increasingly complex. Theory (14, 15) has predicted that extremely flat bands appear at a series of magic angles, the largest of which is close to 1°. Flat bands in 2D electron systems, for example the Landau level bands that appear in the presence of external magnetic fields, allow for physical properties that are dominated by electron-electron interactions, and have been friendly territory for the discovery of fundamentally new states of matter. Here we report transport and scanning probe microscopy (SPM) studies of bilayer graphene moiré crystals with carefully controlled small-twist angles (STA), below 1°. We find that conductivity minima emerge in transport at neutrality, and at anomalous satellite densities that correspond to ±8 additional electrons in the moiré crystal unit cell, and that the conductivity minimum at neutrality is not weakened by a transverse electric field applied between the layers. Our observations can be explained only by strong electronic correlations. MethodsOur STA bilayer graphene samples are fabricated by sequential graphene and hexagonal boron-nitride (hBN) flake pick-up steps using a hemispherical handle substrate (16) that allows an individual flake to be detached from a substrate while leaving flakes in its immediate proximity intact. To...

A software tool that facilitates the development of image reconstruction algorithms, and the design of optimal capacitance sensors for a capacitance-based 12-electrode tomographic flow imaging system are described. The core of this software tool is the finite element (FE) model of the sensor, which is implemented in OCCAM-2 language and run on the Inmos T800 transputers. Using the system model, the in-depth study of the capacitance sensing fields and the generation of flow model data are made possible, which assists, in a systematic approach, the design of an improved image-reconstruction algorithm. This algorithm is implemented on a network of transputers to achieve a real-time performance. It is found that the selection of the geometric parameters of a 12-electrode sensor has significant effects on the sensitivity distributions of the capacitance fields and on the linearity of the capacitance data. As a consequence, the fidelity of the reconstructed images are affected. Optimal sensor designs can, therefore, be provided, by accommodating these effects.

In minimally twisted bilayer graphene, a moiré pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge states when the AB and BA regions are gapped. We fabricate designer moiré crystals with wavelengths longer than 50 nm and demonstrate the emergence of TPH states on the domain wall network by scanning tunneling spectroscopy measurements. We observe a double-line profile of the TPH states on the domain walls, only occurring when the AB and BA regions are gapped. Our results demonstrate a practical and flexible method for TPH state network construction.

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We demonstrate a close relationship between superconductivity and the dimensions of the Fe-Se(Te) tetrahedron in FeSe0.5Te0.5. This is done by exploiting thin film epitaxy, which provides controlled biaxial stress, both compressive and tensile, to distort the tetrahedron. The Se/Te height within the tetrahedron is found to be of crucial importance to superconductivity, in agreement with the scenario that (π, π) spin fluctuations promote superconductivity in Fe superconductors.

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