The use of renewable energy, especially solar photovoltaic, has grown more and more necessary in the context of the diversification of the use of natural resources. Sb2S3 is emerged as an attractive candidate for today's thin-film solar cells due to its band gap of 1.65 eV and high absorption coefficient greater than 105 cm-1. Cadmium Sulfide is the most commonly used buffer layer material in thin film solar cells, but cadmium is a metal that causes severe toxicity in humans and the environment. This article tried to avoid cadmium for solar cell generation. This paper presents the findings of a computer simulation analysis of a thin film solar cell based on a p-type Sb2S3 absorber layer and an n-type ZnSe buffer layer in a structure of (Sb2S3/ZnSe/i-ZnO/ZnO: Al) utilizing simulation software (SCAPS-1D). The simulation included detailed configuration optimization for the thickness of the absorber layer, buffer layer, defect density, temperature, and series-shunt resistance. In this work, the Efficiency (η), Fill Factor (FF), Open-circuit Voltage (Voc), and short-circuit current (Jsc) have been measured by varying thickness of absorber layer in the range of 0.5µm to 4 µm and by varying thickness of buffer layer in the range of 0.05 µm to 0.1µm. The optimized solar cell shows an efficiency of 20.03% when the absorber layer thickness is 4µm and the buffer layer thickness is 0.08µm.

In this research work, a copper bismuth oxide- (CuBi2O4-) based thin-film solar cell has been proposed for the lead and toxic-free (Al/ITO/TiO2/CuBi2O4/Mo) structure simulated in SCAPS-1D software. The main aim of this work to make an ecofriendly and highly efficient thin-film solar cell. The absorber layer CuBi2O4, buffer layer TiO2, and the electron transport layer (ETL) ITO have been used in this simulation. The performance of the suggested photovoltaic devices was quantitatively evaluated using variations in thickness such as absorber, buffer, defect density, operating temperature, back contact work function, series, shunt resistances, acceptor density, and donor density. The absorber layer thickness is fixed at 2.0 μm, the buffer layer at 0.05 μm, and the electron transport layer at 0.23 μm, respectively. The CuBi2O4 absorber layer produces a solar cell efficiency of 31.21%, an open-circuit voltage ( V oc ) of 1.36 V, short-circuit current density ( J sc ) of 25.81 mA/cm2, and a fill factor (FF) of 88.77%, respectively. It is recommended that the proposed CuBi2O4-based structure can be used as a potential for thin-film solar cells that are both inexpensive and highly efficient.

In this research, we have proposed a Sn-based perovskite solar cell using solar cell capacitance software. The main aim of this study is to develop an environment-friendly and highly efficient structure that can be used as an alternative to other toxic lead-based perovskite solar cells. This work performed a numerical analysis for the proposed (Al/ZnO/SnO2/CH3NH3SnI3/Ni) device structure. The absorber layer CH3NH3SnI3, buffer layer SnO2, and electron transport layer (ETL) ZnO, with aluminium as the front contact and nickel as the back contact, have been used in this simulation. Several analyses have been conducted for the proposed structure, such as the impact of the absorber layer thickness, acceptor density, defect density, series and shunt resistances, back contact work function, and operating temperature. The device simulation revealed that the optimum thickness of the absorber layer is 1.5 μm and 0.05 μm for the buffer layer. The proposed Sn-based perovskite structure has obtained a conversion efficiency of 28.19% along with FF of 84.63%, Jsc of 34.634 mA/cm2, and Voc of 0.961 V. This study shows the upcoming lead-free perovskite solar cell’s enormous potential.