To maximize the multilevel data storage capability for high-density memory applications, precise control of quantized conduction with ultralow transition energy is required. We report the quantized conduction in Ag/Ag2S/vacuum conductive-bridge random access memory under various pulse conditions to regulate atomic motion at room temperature. Using stochastic analysis, we unveil a pulse condition for supplying the optimal energy that allows precise atom detachment and has a high dissolution probability. In addition, we calculate the transition energy required to change each quantized state for an Al2O3 electrolyte and vacuum gap. We determine a large transition energy of Ag in Al2O3 (8–1 mJ), hindering the precise control of quantized conduction, whereas the transition energy of Ag in vacuum is relatively low (397–95 nJ), enabling proper atomic motion.
Grain boundary (GB) is a significant factor that deteriorates the transfer characteristics of poly Si thin-film transistors (TFTs). In this study, we utilized the synergistic effect of microwave annealing (MWA) and high-pressure hydrogen annealing (HPHA) to effectively reduce grain boundary trap (GBT) density, resulting in improved field-effect mobility (μ) and subthreshold swing (SS). To investigate the synergistic effect of MWA and HPHA, the transfer characteristics of rapid thermal annealing (RTA) and forming gas annealing (FGA) devices were compared and analyzed as control devices. Furthermore, the mechanism of SS and mobility enhancement can be quantitatively understood by lowering the GB barrier height. In addition, Raman spectroscopy proved that poly-Si crystallinity was improved during MWA. Our results showed that MWA and HPHA play a vital role in reducing GBT density and improving poly-Si TFT characteristics.
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