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Thermoelectric generators are a reliable and environmentally friendly source of electrical energy. A crucial step for their development is the maximization of their efficiency. The efficiency of a TEG is inversely related to its electrical contact resistance, which it is therefore essential to minimize. In this paper, we investigate the contacting of an Al electrode on Mg2(Si,Sn) thermoelectric material and find that samples can show highly asymmetric electrical contact resistivities on both sides of a leg (e.g., 10 µΩ·cm2 and 200 µΩ·cm2). Differential contacting experiments allow one to identify the oxide layer on the Al foil as well as the dicing of the pellets into legs are identified as the main origins of this behavior. In order to avoid any oxidation of the foil, a thin layer of Zn is sputtered after etching the Al surface; this method proves itself effective in keeping the contact resistivities of both interfaces equally low (<10 µΩ·cm2) after dicing. A slight gradient is observed in the n-type leg’s Seebeck coefficient after the contacting with the Zn-coated electrode and the role of Zn in this change is confirmed by comparing the experimental results to hybrid-density functional calculations of Zn point defects.

There have been significant developments in the enhancement of the thermoelectric (TE) performances of p-type PbTe compounds; however, the TE performances of n-type compounds are not compatible with those of p-type ones.

We have performed path-integral Monte Carlo calculations to study the adsorption of (4)He atoms on two different C36 isomers with the D6h and the D2d symmetries. The radial (4)He density distributions reveal layer-by-layer growth with the first layer being located at a distance of ∼5.5 Å from the C36 molecular center and the second layer at ∼8.3 Å. From the angular density profiles of (4)He, we find different quantum states as the number of (4)He adatoms N varies. For N = 20, we observe commensurate solid structures on both D6h and D2d isomers, where each of 8 hexagon and 12 pentagon centers of the fullerene surfaces is occupied by a single (4)He atom. The second-layer promotion starts beyond N = 38 on both isomers, where a compressible incommensurate structure is observed on the D6h isomer and another commensurate structure on D2d. Between N = 20 and N = 38, the (4)He monolayer on D6h shows several distinct rings of delocalized (4)He atoms along with strongly anisotropic superfluid responses at low temperatures, while isotropic but weak superfluid responses are observed in the (4)He layer on D2d.