We present the design of a high-efficiency power amplifier using silicon LDMOSFETs for the ultra-broadband from 2 to 500MHz. To achieve both the high efficiency and the output power required, the bias condition for the class-AB operation has been applied. In addition, a push-pull structure and a negative feedback network have been adopted for the broadband operation which has been implemented using broadband coaxial transmission line transformers and a broadband high-Q RF choke inductor. It is shown from the experimental results presented that the implemented power amplifier exhibits an output power at the 1dB compression point (P1dB) of more than 5W, as well as having a power-added efficiency of more than 43% at P1dB over the entire operational frequency band from 2 to 500MHz. The results also show very flat power gain characteristics of 22 1.5dB from 2MHz to 500MHz.Index Terms -Broadband power amplifier, broadband impedance transformer, coaxial transmission line, broadband RF choke, ferrite core
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