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The angular dependences of SiO2 etch rates for C4F6/O2/Ar and C4F6/CH2F2/O2/Ar plasmas were investigated using a Faraday cage system. In the absence of CH2F2, the steady-state fluorocarbon film that formed on the SiO2 surface was thin enough (<10 Å) for ions to penetrate through the film. The normalized etch yield (NEY) curve in this case showed a maximum value of 1.74 at an ion-incident angle of 70°, illustrating that physical sputtering was a major contributor to the SiO2 etching. The addition of CH2F2 to C4F6/O2/Ar plasmas produced thicker and more etch-resistant fluorocarbon films, leading to a decrease in the ion energy transfer depth through the steady-state films. This implies that physical sputtering was suppressed when CH2F2 was present in the plasma, demonstrated by a decrease in the maximum NEY and the ion-incident angle at the maximum NEY.

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Slanted Cu nanopillars with uniform arrays were fabricated using slanted Si channel structures as templates. A slanted plasma etching technique was employed, utilizing a Faraday cage system for the formation of these slanted channel structures. The angle of the slanted channel structures was accurately controlled because ions entering the Faraday cage maintained their direction. After the slanted channel structures were formed, they were filled with Cu by electroless deposition. Chemical mechanical polishing was then used to remove the excess Cu film and the SiO 2 masks. Finally, the remaining poly Si of the channel structures was removed by wet chemical etching. This work offers a novel method for the fabrication of slanted metal nanostructures with uniform arrays covering a large area.

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