This paper presents a BSI(backside-illumination) 14μm-pixel QVGA CMOS image sensor SOC(System On a Chip) measuring TOF(Time-Of-Flight) by 20MHz-intensity modulation of 850nm-wavelength light. The 34% of overall QE(Quantum Efficiency) at 850nm-wavelength is acquired by BSI structure and optimized micro-lens. The DE(Depth Error) less than 1.5% within 6m is achieved with imaging lens of f/1.2 and LED array of which the optical intensity is 0.6W/m 2 at 1m-distance. Additionally, the depth linearity is measured as that the coefficient of determination is equal to 0.9999. In order to operate under background light illumination on a scene, dual CG(Conversion Gain) scheme is implemented in each pixel.

The local structures of Hf-O-N thin films were analyzed using an extended X-ray absorption fine structure (EXAFS) study on Hf L III -edge and first-principles calculations. Depending on their composition and atomic configurations, Hf 4 O 8 (CN: 7.0), Hf 4 O 5 N 2 (CN: 6.25) and Hf 4 O 2 N 4 (CN: 5.5) were suggested as the local structures of Hf-O-N thin films. The optical band gaps of Hf-O-N thin films were compared with the calculated band gap. And to investigate the optical absorption, the effects of film compositions on the valence bands of Hf-O-N thin films were analyzed by comparing the experimental valence band with the valence band.