IrO 2 thin films were prepared by radio frequency magnetron sputtering technique at different substrate temperatures. Supercapacitive properties of the films were studied by cyclic voltammetry and electrochemical impedance spectroscopy in 1 M LiNO 3 electrolyte for the first time. The specific capacitance of the single IrO 2 film electrode was calculated to be 293 F g −1 at a scan rate of 5 mV s −1 for the sample prepared at room temperature. After 1000 cycles, the specific capacitance of IrO 2 electrode decreases slightly, indicating the sputtered IrO 2 thin-film electrode has excellent cycling performance in aqueous LiNO 3 electrolyte.Many transition metal oxides, such as RuO 2 , TiO 2 , Co 3 O 4 , NiO x , MnO 2 , V 2 O 5 , etc., have been studied extensively for high-power redox supercapacitor applications. 1-5 Iridium oxide ͑IrO 2 ͒ is one of the versatile oxide materials among the transition metal oxides that exhibit low resistivity at room temperature. It is an electrically conductive transition metal oxide that crystallizes in the tetragonal rutile structure and possesses excellent stability in acidic and basic solutions. 6,7 Due to its attractive electrical, optical, and electrochemical properties, 8-10 IrO 2 has been used for many applications such as optical switching layers in electrochromic displays, sensitive material in pH sensors, and electrodes for chlorine and oxygen evolution. 11,12 Furthermore, IrO 2 has also been used in neural electrical stimulation because of its excellent biocompatibility and effectiveness in injecting charge. 13 However, there are few reports of IrO 2 , to the best of our knowledge, as an electrode material for an aqueous supercapacitor.Radio frequency ͑rf͒ magnetron sputtering is a simple, one-step and relatively cost-effective method for thin-film preparation. The texture, surface morphology and uniformity of deposits can be controlled by adjusting the experimental variables such as substrate temperature ͑Ts͒ and sputtering time using different gases and power. In the present work, the rf sputtering method was employed for the deposition of IrO 2 thin film on stainless steel ͑SS͒ substrate. The deposited film was studied as an electrode material for supercapacitors. The electrochemical performances of the thin-film electrode were measured in 1 M LiNO 3 solution.
ExperimentalIridium oxide films were sputtered on a SS substrate from an iridium metal target ͑99.9%͒ in Ar/O 2 plasma, and the Ar/O 2 ratio was controlled at 9:1. The sputtering process was performed in an rf mode with a power of 100 W at different temperatures. The film thickness was measured via a surface profile ͑Tencor, Alpha-Step 200͒, and the deposition rate was about 0.5 nm min −1 . In this work the deposition time was 120 min.The structural analysis of iridium oxide thin films was carried out using an X-ray diffractometer ͑XRD, Philips X'pert Pro͒. The surface morphology of the films was studied by field emission scanning electron microscopy ͑FE-SEM, JSM-6330F͒. Cyclic voltammetry ͑CV͒ was performed usin...