We have measured the relaxation time in ferroelectric TAAP near the Curie temperature. The dielectric relaxation in this crystal could be described to a good approximation by the Debye equations. The relaxation time exhibits critical slowing down characteristic of an order-disorder transition.
Metal-graphene-metal photodetectors utilize photocurrent generated near the graphene/metal junctions and have many advantages including high speed and broad-band operation. Here, we report on photocurrent generation at ABA/ABC stacking domain junctions in tri-layer graphene with a responsivity of 0.18 A/W. Unlike usual metal-graphene-metal devices, the photocurrent is generated in the middle of the graphene channel, not confined to the vicinity of the metal electrodes. The magnitude and the direction of the photocurrent depend on the back-gate bias.Theoretical calculations show that there is a built-in band offset between the two stacking domains, and the dominant mechanism of the photocurrent is the photo-thermoelectric effect due to the Seebeck coefficient difference.
The velocities of two types of 60° dislocations (α and β dislocations) in undoped n-type InAs and undoped p-type GaSb have been measured by the double-etch technique. In both crystals, α dislocations are more than 10 times as fast as β dislocations. The results, combined with previous results on InSb and GaAs, show that the dislocation velocities in III–V compound semiconductors decrese with increasing energy band gap.
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