The ZrO 2 /La 2 O 3 bilayer structure has been formed on Si by using atomic layer deposition system. The ZrO 2 /La 2 O 3 (ZLS) bilayer was swapped to La 2 O 3 /ZrO 2 (LZS) on Si and the interface properties were investigated. The chemical compositions of deposited thin films were studied by using XPS, while surface properties were investigated by means of AFM. The shift in binding energies of both gate stacks were observed. The XPS study shows the formation of silicate at the interface of both stacks. The lower surface roughness of 0.15 nm was observed for the LZS gate stack over the ZLS gate stack. This indicates that, La 2 O 3 /ZrO 2 /Si combination could be a more promising candidate for future MOS devices than that of ZrO 2 /La 2 O 3 /Si.
The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.
MIM devices fabricated with 10-nm thickness of Al2O3 high-[Formula: see text] thin film deposited using plasma-enhanced atomic layer deposition (PEALD) system on Al-coated Si substrate were investigated. The structural, morphological and electrical properties of Ti/Al2O3/Al/Si MIM capacitors as-deposited and post-deposition annealed (PDA) at different temperatures were studied and compared. Al2O3 thin films were investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD) and Ti/Al2O3/Al/Si MIM capacitors were characterized by current–voltage ([Formula: see text]–[Formula: see text] and capacitance–voltage ([Formula: see text]–[Formula: see text] measurements. The stable phase formation of Ti/Al2O3/Al/Si MIM capacitor provides the lowest leakage current density in the range of nA/cm2 for as-deposited and annealed films.
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