Graphene turns out to be the pioneering material for setting up boulevard to a new zoo of recently proposed carbon based novel two dimensional (2D) analogues. It is evident that their electronic, optical and other related properties are utterly different from that of graphene because of the distinct intriguing morphology. For instance, the revolutionary emergence of Dirac cones in graphene is particularly hard to find in most of the other 2D materials. As a consequence the crystal symmetries indeed act as a major role for predicting electronic band structure. Since tight binding calculations have become an indispensable tool in electronic band structure calculation, we indicate the implication of such method in graphene’s allotropes beyond hexagonal symmetry. It is to be noted that some of these graphene allotropes successfully overcome the inherent drawback of the zero band gap nature of graphene. As a result, these 2D nanomaterials exhibit great potential in a broad spectrum of applications, viz nanoelectronics, nanooptics, gas sensors, gas storages, catalysis, and other specific applications. The miniaturization of high performance graphene allotrope based gas sensors to microscopic or even nanosized range has also been critically discussed. In addition, various optical properties like the dielectric functions, optical conductivity, electron energy loss spectra reveal that these systems can be used in opto-electronic devices. Nonetheless, the honeycomb lattice of graphene is not superconducting. However, it is proposed that the tetragonal form of graphene can be intruded to form new hybrid 2D materials to achieve novel superconducting device at attainable conditions. These dynamic experimental prospects demand further functionalization of these systems to enhance the efficiency and the field of multifunctionality. This topical review aims to highlight the latest advances in carbon based 2D materials beyond graphene from the basic theoretical as well as future application perspectives.

Present work reports an elegant method to address the emergence of two Dirac cones in a non-hexagonal graphene allotrope S-graphene (SG). We have availed nearest neighbour tight binding (NNTB) model to validate the existence of two Dirac cones reported from density functional theory (DFT) computations. Besides, the real space renormalization group (RSRG) scheme clearly reveals the key reason behind the emergence of two Dirac cones associated with the given topology. Furthermore, the robustness of these Dirac cones has been explored in terms of hopping parameters. As an important note, the Fermi velocity of the SG system (vF $$\simeq $$≃ c/80) is almost 3.75 times that of the graphene. It has been observed that the Dirac cones can be easily shifted along the symmetry lines without breaking the degeneracy. We have attained two different conditions based on the sole relations of hopping parameters and on-site energies to break the degeneracy. Further, in order to perceive the topological aspect of the system we have obtained the phase diagram and Chern number of Haldane model. This exact analytical method along with the supported DFT computation will be very effective in studying the intrinsic behaviour of the Dirac materials other than graphene.

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We present a real-space formulation for calculating the electronic structure and optical conductivity of such random alloys based on the Kubo-Greenwood formalism interfaced with the augmented space recursion (ASR) [A. Mookerjee, J. Phys. C: Solid State Phys. 6, 1340 (1973)] formulated with the Tight-binding Linear Muffin-tin Orbitals (TB-LMTO) basis with van Leeuwen-Baerends corrected exchange (vLB) [Singh et al., Phys. Rev B 93, 085204, (2016)]. This approach has been used to quantitatively analyze the effect of chemical disorder on the configuration averaged electronic properties and optical response of 2D honeycomb siliphene SixC1−x beyond the usual Dirac-cone approximation. We predicted the quantitative effect of disorder on both the electronic-structure and optical response over a wide energy range, and the results discussed in the light of the available experimental and other theoretical data. Our proposed formalism may open up a facile way for planned band gap engineering in opto-electronic applications.